This research article utilizes the finite element method of analysis to achieve the finest throughput of piezoresistive nano cantilever sensor by minimizing the dimensions of both physical piezoresistor and cantilever. The 750nmx300nmx15nm-sized cantilever is incorporated with 5nm substantial Si as piezoresistor is used for revision. The proposed cantilever output performance has been calculated based onsurface stress sensitivity and displacement. A maximumresultant displacement value of about 12nm for the load of 100pN has been obtained . The Performance comparison between Polysilicon and SiO2 cantilever has been found out by applied identical load and measured displacement. Similarly the sensitivity of the cantilever sensor by parametric sweep on thickness is applied for both cantilever and piezoresistor. The parametric sweep results shows that the sensitivity of the cantilever is highest when the thickness of both cantilever and piezoresistoris at the smallest. Poly silicon and SiO2 based cantilevers with the built-in longitudinal cut at the bottom create stress concentration regions which will greatly improved sensitivity as high as 13.89% and 31.81% in comparison with other Non-SCR cantilevers for the proposed design.