he paper shows the possibility of self-organization of microparticles of impurity nickel atoms in silicon under certain thermodynamic conditions. It was found that the concentration of microparticles in the volume is distributed almost uniformly. It was found that upon additional annealing, self-ordering of microparticles of impurity atoms in the silicon bulk and the formation of Schottky micro-barriers occur. The study of the I – V characteristics of these samples showed that at the points where the microscopy of nickel atoms formed, it has a diode character. The obtained experimental data show the possibility of creating photocells (PV) based on compensated silicon by the impurity of nickel atoms. To study the fundamental electrophysical parameters of photocells, modern methods and instruments were used, such as an MIC-5 infrared analysis microscope, Oxford Instruments ZEISS EVOMA 10 REM analysis, XIA-200 atomic force microscope, and X'PertPowder diffractometer. Micro- and nanoclusters found in silicon are explained by the accumulation of concentration of nickel atom clusters. It has been established that the overgrown clusters of impurity nickel atoms lead to an improvement in the electrophysical parameters of photocells.