Investigation of the features of the transition of self-oscillations of current from one type to another in highly compensated silicon doped with impurity atoms of manganese, zinc and sulfur is of great interest from the point of view of studying both the mechanisms of self-sustained oscillations of the current and the physics of nonequilibrium processes. Based on the results obtained and the analysis performed, it has been established that the observed self-oscillations of the current in strongly compensated silicon are associated with nanoclusters of primus atoms. A model of a strongly compensated semiconductor is proposed to explain the mechanism of self-oscillations of the current in strongly compensated silicon, taking into account the multi-charge character of nano-clusters of atoms. It was found that the proposed model is in satisfactory agreement with the experimental results.